固态断路器
概览
随着宽禁带半导体技术的进步，各种形式的固态断路器正在占据更大的市场份额。与硅基半导体相比，宽禁带半导体开关的导通损耗更低，运行效率更高。固态断路器（SSCB）又称电路电子断路器，由于其开关是半导体，因此不含机械零件。
固态断路器速度更快，可以动态调整，并可连接到智能网络和支持远程监控。它们可用于各种应用，包括住宅、商业和工业交流系统。它们还可用于热插拔应用和高压直流系统，如电动汽车中高压电池的隔离开关。
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产品
Silicon Carbide (SiC) JFETs
Our SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses.
SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
Silicon Carbide (SiC) Combo JFETs
SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.
Gate Drivers
NCP51152
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver
GFCI Controllers
NCS37010
Ground Fault Circuit Interrupter (GFCI) with Self Test and Lockout
Ethernet Controllers
NCN26000
10BASE-T1S Ethernet PHY with MII interface
Ethernet Controllers
NCN26010
Ethernet Controller, 10 Mb/s, Single-Pair, MAC + PHY, 802.3cg, 10BASE−T1S Compliant
Bluetooth Low Energy
RSL15
Bluetooth® 5.2 Secure Wireless MCU
Silicon Carbide (SiC) MOSFETs
Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Documents
Application Notes
SiC Combo JFET Technical Overview
User's Manual
SiC Cascode JFET & Module User Guide
Eval Board: Manual
Combo JFET SSCB Evaluation Board User's Manual
Application Notes
How to Slow Down dV/dt During Switching Using SiC Cascode JFETs
User's Manual
JFET and Combo-FET User Guide
Application Notes
JFET Primer - Construction and Operation of the SiC JFET
Application Notes
Cascode Primer Operation of the SiC Cascode JFET
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solid state circuit breaker