Solid-State Circuit Breaker
Semiconductor-Based Protection
Solid-state circuit breakers (SSCBs) are advanced, semiconductor-based protection devices that replace mechanical contacts with electronic switching. They offer ultra-fast response and arc-free operation.
概览
With advancements in the wide-bandgap semiconductor technology, solid-state circuit breaker variants are taking on a bigger market share. Wide-bandgap semiconductor switches have lower on-state losses and higher efficiency during normal operation compared to silicon-based semiconductors. Solid-state circuit breakers (SSCBs), also known as circuit e-breakers, do not contain mechanical parts as their switch is a semiconductor.
Solid-state circuit breakers are faster, can be dynamically adjusted and can be connected to the intelligent network and monitored remotely. They can be used in various applications, including residential, commercial and industrial AC systems. They can also be used in hot swap applications and in HV DC systems, as a disconnect switch for HV battery in electric vehicles.
JFETs in Circuit Protection
The future of circuit protection is SiC JFET-based. Watch the webinar and download the tutorial to dive into smart, efficient solid-state design.
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Circuit Protection with onsemi SiC Combo JFETs
Interest in solid-state circuit breakers is rising, and SiC FETs offer a simplified path to high-current DC and AC protection solutions.
White Paper
From Challenging Material to Robust Reliability
White Paper explains how Silicon Carbide (SiC) enables faster, more efficient power devices, and how onsemi has adapted methods to meet SiC’s unique challenges.
White Paper
10BASE−T1S Ethernet
Read White Paper to find how 10BASE-T1S is set to replace traditional interfaces, while being faster and only using single twisted pair.
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产品
Silicon Carbide (SiC) JFETs
Our SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses.
SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
Silicon Carbide (SiC) Combo JFETs
SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.
Gate Drivers
NCP51152
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver
GFCI Controllers
NCS37010
Ground Fault Circuit Interrupter (GFCI) with Self Test and Lockout
Ethernet Controllers
NCN26000
10BASE-T1S Ethernet PHY with MII interface
Ethernet Controllers
NCN26010
Ethernet Controller, 10 Mb/s, Single-Pair, MAC + PHY, 802.3cg, 10BASE−T1S Compliant
Bluetooth Low Energy
RSL15
Bluetooth® 5.2 Secure Wireless MCU
Silicon Carbide (SiC) MOSFETs
Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Documents
Application Notes
SiC Combo JFET Technical Overview
User's Manual
SiC Cascode JFET & Module User Guide
Eval Board: Manual
Combo JFET SSCB Evaluation Board User's Manual
Application Notes
How to Slow Down dV/dt During Switching Using SiC Cascode JFETs
User's Manual
JFET and Combo-FET User Guide
Application Notes
JFET Primer - Construction and Operation of the SiC JFET
Application Notes
Cascode Primer Operation of the SiC Cascode JFET
Solid-State Circuit Breaker
Origins of SiC JFETs
The white paper traces the origins and evolution of the SiC FET to its latest generation and compares its performance with alternative technologies.
Solid-State Circuit Breaker
Solid-State Circuit Protection
Watch and learn how SiC JFETs and Combo JFETs enable faster, safer, and smarter solid-state circuit breaker designs for high-voltage applications.
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solid state circuit breaker