牵引逆变器
概览
主驱逆变器是电动汽车的心脏，为车辆提供扭矩和加速能力。逆变器和其所控制的电动机的响应速度直接影响驾驶感受和消费者的满意度。
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常见功率水平为40kW到250+kW，这需要非常强大的IGBT和碳化硅（SiC）元器件。我们的主驱逆变器设计，得益于其可扩展性、增强的热性能、以及行业最低电感的封装结构，能够实现最高效率、最先进的功率密度和敏捷的响应速度。当400V-800V的电池为主驱逆变器供电，逆变器部件的额定电压需要达到600V-1200V，同时每相的运行电流水平高达1000A。安森美（onsemi）的EliteSiC和 VE-Trac 模块解决方案提供基础的主驱逆变器设计，让您的汽车产品功能更大强大和可靠。
用于主驱逆变器的EliteSiC功率模块
安森美在碳化硅技术长达二十余年的研发经验，打造革命性的高迁移率化合物半导体产品系列。用于主驱逆变器的EliteSiC功率模块提供裸片方案、单侧直接冷却外壳模块和单面压铸模模块，全集成全碳化硅场效应管。相较于IGBT方案，EliteSiC产品系列比类似的高兼容性封装方案，提供更优秀的性能、效率和功率密度。
VE-Trac系列
VE-Trac™系列（用于主驱的汽车电气化系列）是专为电动车主驱逆变器设计的车规级功率模块。VE-Trac功率模块可选用IGBT硅，该模块是在电动车（EV）或混动车（HEV）中转换直流电池电源的组件。电动车和混动车上有一个锂离子电池，采用目前领先的 电子电池（e-battery）技术，将能量储存在直流电池中，然后我们的功率模块将提取这些能量并转换为交流电来驱动电机，进而为汽车行进提供推力。这一技术直接关乎从里程和性能、到电池寿命和驾驶体感各个方面。
Build your Custom Traction Inverter Module
Implement the latest M3e MOSFET, bare die format, in any custom module design. Based on the latest M3e EliteSiC technology optimized for automotive traction inverters.
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Impact of Stray Inductance on Switching Characteristics
Learn about the influence of DC-link loop inductance on the switching characteristics for the VE−Trac IGBT and EliteSiC power modules.
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Simulate with Elite Power Simulator
Learn how the PLECS model tool delivers accurate representation of how circuit will work using our EliteSiC, FS7 IGBTs and T10 MOSFETs.
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EliteSiC Products Ensure Quality and Reliability
onsemi’s rigorous SiC qualifications and reliability testing ensure high-quality, dependable products for our customers.
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产品
Silicon Carbide (SiC) Modules
SiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200V.
A Silicon Carbide (SiC) Module is a power module that operates with Silicon Carbide semiconductors for its switch. The purpose of a SiC power module is the transformation of electrical power through switches to improve system efficiency.
The primary function of SiC Modules is to transform electrical power. Silicon Carbide offers an advantage over silicon because, with less resistance to move away from the source (due to increased efficiency), SiC devices can operate at a higher switching frequency. A SiC based system is also more compact and lightweight than a silicon solution, allowing for smaller designs. Therefore, SiC devices are the ideal solution for situations where you want to increase efficiency and improve your thermal management.
Silicon Carbide (SiC) MOSFETs Bare Die
onsemi's Silicon Carbide(SiC) bare dies are optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.
IGBT Modules
IGBT Modules are used in traction and in the DC-AC stages of solar inverters, energy storage systems, uninterruptible power supplies and motor drives.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Linear Regulators (LDO)
A portfolio that provides optimum solution for low power, space conscious and low noise designs.
Current Sense Amplifiers
Current sensing requires accurate measurements and onsemi’s current sense amplifiers offer high degree of precision current sensing along with the advantages of wide input common mode range, bidirectional current sensing and high/low side current sensing.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Wired Transceivers & Modems
Modems and transceivers for a variety of data transmission protocols, including FlexRayTM, KNX, M-BUS, LIN, CAN, MAU, HART and Power Line Carrier (PLC).
ESD Protection Diodes
Protection diodes and arrays that are specifically designed to provide ESD and surge protection.
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Documents
White Papers
When Planar is Superior to Trench: An In-Depth Look at the Continued Evolution of Silicon Carbide MOSFETs
Application Notes
Impact of Stray Inductance on EliteSiC Power and VE-Trac™ IGBT Module's Switching Characteristics
Application Notes
VE-Trac™️ Direct / Direct SiC Assembly Guide
Application Notes
Short Circuit Protection Circuit Design for High Power Modules
Application Notes
使用隔离式栅极驱动器的实用设计指南
White Papers
Modeling and Validation of a Silicon-Carbide Power Module for Traction Inverters
Collateral Brochure
Overcoming the Challenges of Silicon Carbide to Ensure Application Success
Application Notes
onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations
White Papers
IGBT Technologies and Applications Overview: How and When to Use an IGBT
White Papers
优化混动和电动汽车的能效和性能
评估板/套件
Evaluation Kit
NVH820S75L4SPB-EVK
Evaluation Board
EVBUM2897G-EVB
Evaluation Board
EVBUM2901G-EVB
Evaluation Kit
EVBUM2909G-EVK
Power Modules for Traction Inverter
Power Module Variants for Design Flexibility
The VE−Trac™ is a line of power modules designed for xEV traction inverters, available in 6-pack and H-bridge configurations. Pick IGBT, Si or EliteSiC MOSFET module technology.
In-Depth Look at SiC Technology
When Planar is Superior to Trench
Reliability is as critical as power density in traction inverters. Leverage a mature, more robust planar technology base to deliver a performance comparable with trench.
Design Resources
Tools and resources for your evaluation process.
Find the Right Product
Utilize our PRT+ tool to identify the ideal product for you.
System Solution Guides
Explore tailored components and insights for your application.
Evaluation Boards & Kits
Buy and validate the performance of chosen components.
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