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NVTFS5116PL: 单 P 沟道,功率 MOSFET,-60V,-14A,52mΩ

Datasheet: MOSFET - Power, Single P-Channel -60 V, -14 A, 52 mOhms
Rev. 3 (132kB)
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适用于紧凑和高效设计的汽车用功率 MOSFET,安装在 3x3mm 扁平引线封装中且具有较高的热性能。可用于增强光学检测的可润湿侧翼选项。AEC-Q101 认证 MOSFET 且具备生产件批准程序(PPAP) 功能,适用于汽车应用。
特性   优势
     
  • Small Footprint (3.3 x 3.3 mm)
 
  • Compact Design
  • Low On-Resistance
 
  • Minimize Conduction Losses
  • Low Capacitance
 
  • Minimize Driver Losses
  • NVTFS5116PLWF − Wettable Flanks Product
 
  • Enhanced Optical Inspection
  • AEC−Q101 Qualified and PPAP Capable
 
  • Suitable for Automotive Applications
  • RoHS Compliant
   
应用   终端产品
  • Automotive load switch
  • Motor driver
  • DC-DC switch output
 
  • Automotive engine controllers
  • Automotive body controllers
  • Automotive infotainment power supplies
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
NV78763RLA11GEVK Active
Pb-free
NCV78763 REFERENCE DESIGN LDM A Day Time Running Light (DRL)/ Position Light (PL) and Turn Indicator (TURN) Kit
Availability & Samples
Specifications
外形
Intaractive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVTFS5116PLTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVTFS5116PL WDFN-8 / u8FL 511AB 1 260 Tape and Reel 1500 Contact Sales Office
NVTFS5116PLTWG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVTFS5116PL WDFN-8 / u8FL 511AB 1 260 Tape and Reel 5000 Contact Sales Office
NVTFS5116PLWFTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVTFS5116PL WDFN-8 / u8FL 511AB 1 260 Tape and Reel 1500 Contact Sales Office
NVTFS5116PLWFTWG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVTFS5116PL WDFN-8 / u8FL 511AB 1 260 Tape and Reel 5000 Contact Sales Office
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K
市场订货至交货的时间(周) : Contact Factory
FutureElectronics   (2020-08-19 00:00) : >100K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVTFS5116PLTAG  
Pb
A
H
P
 Active   
P-Channel
Single
-60
20
-3
14
21
-
72
52
0.9
25
1258
WDFN-8 / u8FL
NVTFS5116PLTWG  
Pb
A
H
P
 Active   
P-Channel
Single
-60
20
-3
14
21
-
72
52
0.9
25
1258
WDFN-8 / u8FL
NVTFS5116PLWFTAG  
Pb
A
H
P
 Active   
P-Channel
Single
-60
20
-3
14
21
-
72
52
0.9
25
1258
WDFN-8 / u8FL
NVTFS5116PLWFTWG  
Pb
A
H
P
 Active   
P-Channel
Single
-60
20
-3
14
21
-
72
52
0.9
25
1258
WDFN-8 / u8FL
外形
511AB   
封装
NVTFS5116PL: 单 P 沟道,功率 MOSFET,-60V,-14A,52mΩ
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