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NVHL080N120SC1: 碳化硅 MOSFET,N 沟道,1200 V,80 mΩ,TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 3 (291kB)
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碳化硅 (SiC) MOSFET 使用全新技术,能够提供卓越的开关性能,且比硅具有更高的可靠性。 另外,低导通电阻和紧凑的芯片尺寸可确保低电容和低门极电荷。 因此,系统优点有:最高效率、更快的运行频率、提高了功率密度、降低了 EMI,以及减小了系统尺寸。
特性   优势
     
  • 1200V rated
 
  • Typical RDS(on) = 80mΩ
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
  • Devices are Pb−Free and are RoHS Compliant
   
应用   终端产品
  • PFC
  • OBC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
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产品 状况 Compliance 简短说明 行动
SEC-3PH-11-OBC-EVB Active
Pb-free
Three-phase On Board Charger (OBC) PFC-LLC platform
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
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类型
Temperature
类型
数量
NVHL080N120SC1 Active, Not Rec
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL080N120SC1 TO-247-3LD 340CX NA Tube 450 $6.1224
市场订货至交货的时间(周) : Contact Factory
FutureElectronics   (2020-08-19 00:00) : <1K
外形
340CX   
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Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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