MOSFETs | FDMC4435BZ

-30V P-Channel Power Trench® MOSFET

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概览

这一P沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为最大限度地降低通态电阻而量身定制。 该器件非常适用于笔记本电脑和便携式电池组中的功率管理和负载开关应用。

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 20.0mΩ（在VGS= -10V, ID = -8.5A
    时）
  • 在VGS = -4.5V，ID = -6.3A时，最大值rDS(on) = 37.0 mΩ
  • 扩展了VGSS范围(-25V)，适合电池应用
  • rDS(on)
    极低的高性能沟道技术
  • 高功率和高电流处理能力
  • HBM ESD保护等级7kV典型值>
  • 100%经过UIL测试
  • 终端是符合RoHS标准的无铅产品

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC4435BZ

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

Y

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.3633

More Details

FDMC4435BZ-F126

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

Price N/A

More Details

FDMC4435BZ-F127

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.4737

More Details

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