FDMC8296

N 沟道，Power Trench® MOSFET，30V，18A，8.0mΩ

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概览

此 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的功率和负载开关应用。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = 10V，I_D = 12A时，最大r_DS(on) = 8.0 mΩ
V_GS = 4.5V，I_D = 10A时，最大r_DS(on) = 13.0 mΩ
高性能沟道技术可实现极低的r_DS(on)
终端无引线且符合RoHS标准

物质成分

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC8296

Last Shipments

WDFN-8

511DH

260

REEL

3000

N-Channel

Single

7.6

1038

Price N/A

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MOSFETs | FDMC8296

N 沟道，Power Trench® MOSFET，30V，18A，8.0mΩ

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