MOSFETs | FDS8928A

双 N 和 P 沟道增强型场效应晶体管

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CAD Model

CAD模型

概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属工艺生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供卓越的开关性能。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如笔记本电脑电源管理和其他电池供电电路。

  • This product is general usage and suitable for many different applications.
  • N沟道5.5 A，30 V
  • RDS(ON)=0.030 Ω @ VGS=4.5 V
  • 高密度设计可实现极低的RDS(ON)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 表面贴装封装中的双（N和P沟道）MOSFET

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8928A

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

+30/-20

-

Complementary

Dual

-8

±1

N: 5.5, P: -4.0

2

N: 38.0 , P: 72.0

N:30,P:55

-

20

1130

Price N/A

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