MOSFETs | FQP2N40

N 沟道 QFET® MOSFET

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概览

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

  • This product is general usage and suitable for many different applications
  • 1.8 A、400 V、RDS(on) = 5.8 Ω（最大值）@ VGS = 10 V、ID = 0.9 A•
  • 低栅极电荷（典型值 4.0 nC)
  • 低 Crss（典型值 3.0 pF)
  • 快速开关
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 性能

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP2N40-F080

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

400

5800

N-Channel

Single

5

5

1.8

40

-

-

4

4

115

Price N/A

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