MOSFETs | FQU11P06

功率 MOSFET，P 沟道，QFET®，-60 V，-9.4 A，185 mΩ，IPAK

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概览

此 P 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • LED 电视
  • -9.4A, -60V, RDS(on) = 185mΩ（最大值）@VGS = -10 V, ID = -4.7A栅极电荷低（典型值：13nC)
  • 低 Crss（典型值45pF)
  • 100% 经过雪崩击穿测试
  • 100% Avalanche Tested

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQU11P06TU

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

369AR

NA

0

TUBE

5040

N

-60

185

P-Channel

Single

±30

-4

-9.4

2.5

-

-

-

13

420

Price N/A

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