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NSS20501UW3: 低饱和压 晶体管,NPN,20 V,7.0 A

Datasheet: Low VCE(sat) Transistor, NPN, 20 V, 7.0 A, WDFN3 Package
Rev. 3 (102.0kB)
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低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。
特性   优势
     
  • High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
 
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NSS20501UW3T2G Active
Pb-free
Halide free
NSS20501UW3 WDFN-3 506AU 1 260 Tape and Reel 3000 $0.1809
NSS20501UW3TBG Active
Pb-free
Halide free
NSS20501UW3 WDFN-3 506AU 1 260 Tape and Reel 3000 $0.1809
市场订货至交货的时间(周) : 13 to 16
PandS   (2020-09-14 00:00) : >1K
市场订货至交货的时间(周) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
NSS20501UW3T2G  
 $0.1809 
Pb
H
 Active   
NPN
Low VCE(sat)
0.04
5
20
20
6
0.9
0.9
250
-
150
1.5
WDFN-3
NSS20501UW3TBG  
 $0.1809 
Pb
H
 Active   
NPN
Low VCE(sat)
0.04
5
20
20
6
0.9
0.9
250
-
150
1.5
WDFN-3
外形
506AU   
封装
NSS20501UW3: 低饱和压 晶体管,NPN,20 V,7.0 A
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