feedback
评价本网页

需要帮助?

FCH125N65S3R0: 功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,24 A,125 mΩ,TO-247

Datasheet: MOSFET — Power, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ
Rev. 5 (275kB)
产品概览
»浏览可靠性数据
»查看材料成分
» 产品更改通知
SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进工艺专用于最大程度降低导电损耗,提供卓越的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更简单的设计实施。
特性   优势
     
  • 700 V @ TJ = 150 oC
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
 
  • Low switching loss
  • Ultra Low Gate Charge (Typ. Qg = 46 nC)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Typ. RDS(on) = 105 mΩ
   
  • Internal Gate Resistance: 0.5 Ω
   
应用   终端产品
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FCH125N65S3R0-F155 Active
Pb-free
Halide free
FCH125N65S3R0 TO-247-3 340CH NA Tube 450 $1.716
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCH125N65S3R0-F155  
 $1.716 
Pb
H
 Active   
N-Channel
Single
650
30
4.5
24
181
-
-
105
-
46
1940
TO-247-3
外形
340CH   
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.