FDD10N20LZ: 功率 MOSFET，N 沟道，逻辑电平，UniFETTM，200 V，7.6 A，360 mΩ，DPAK
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UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更好的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电源转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。
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评估/开发工具信息
| 产品 | 状况 | Compliance | 简短说明 | 行动 | |
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| LIGHTING-1-GEVK | Active |
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Connected Lighting Platform for LED Control |
| FutureElectronics (2020-08-19) | : | 4 |
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Availability & Samples
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Specifications
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Intaractive Block Diagram
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Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD10N20LZTM
$0.3185
Pb
A
H
P
Active
N-Channel
Single
200
±20
3
7.6
83
-
400
360
-
12
440
DPAK-3 / TO-252-3
外形
369AS
Application
Diagram - Block
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