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NTD6416AN: 单 N 沟道功率 MOSFET 100V,17A,81mΩ

Datasheet: MOSFET — Power, N-Channel 100 V, 17 A, 81 mΩ
Rev. 4 (126kB)
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单N 沟道 100 V 功率 MOSFET
特性   优势
     
  • Low RDS(on)
 
  • Minimize conduction losses
  • High current capability
 
  • Robust load performance
  • 100% Avalanche tested
 
  • Voltage overstress safeguard
  • RoHS Compliant
   
应用
  • Motor Control
  • UPS Inverter
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
D-LED-B-GEVK Active
Pb-free
Dual LED Ballast Shield Evaluation Board
NV78763RLA11GEVK Active
Pb-free
NCV78763 REFERENCE DESIGN LDM A Day Time Running Light (DRL)/ Position Light (PL) and Turn Indicator (TURN) Kit
FutureElectronics (2020-08-19) : 16
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTD6416AN-1G Obsolete
Pb-free
Halide free
NTD6416AN DPAK INSERTION MOUNT 369 NA Tube 75  
NTD6416ANT4G Active
Pb-free
Halide free
NTD6416AN DPAK-3 369AA 1 260 Tape and Reel 2500 $0.3893
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : <100
市场订货至交货的时间(周) : 13 to 16
PandS   (2020-09-14 00:00) : >1K
FutureElectronics   (2020-08-19 00:00) : >10K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTD6416ANT4G  
 $0.3893 
Pb
H
 Active   
N-Channel
Single
100
20
4
17
71
-
-
81
-
20
620
DPAK-3
外形
369AA    369   
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