NTPF082N65S3F: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-220F
|
|
»浏览可靠性数据
»查看材料成分 » 产品更改通知 |
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
特性 | 优势 | ||||
---|---|---|---|---|---|
|
|
||||
|
|
||||
|
|
||||
|
|
||||
|
|
||||
|
|||||
|
|||||
|
应用 | 终端产品 | |
---|---|---|
|
|
Availability & Samples
|
Specifications
|
|
|
|
|
|
|
|
|
|||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
外形 |
|
|
|
|
|||||||||||||
NTPF082N65S3F | Active |
|
NTPF082N65S3F | TO-220-3 FullPak | 221D-03 | NA | Tube | 1000 | $2.2222
|
市场订货至交货的时间(周) | : | 4 to 8 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTPF082N65S3F
$2.2222
Pb
A
H
P
Active
N-Channel
Single
650
30
5
40
48
-
-
82
-
70
3240
TO-220-3 FullPak
外形
221D-03
设计支援 |