feedback
评价本网页

需要帮助?

NTBG080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, D2PAK−7L

Datasheet: MOSFET - SiC Power, Single N-Channel, D2PAK-7L
Rev. 1 (234kB)
产品概览
»查看材料成分
» 产品更改通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Low On Resistance
 
  • RDSson = 80mΩ typ
  • High Junction Temperature
 
  • Tj = 175C
  • Ultra Low Gate Charge
   
  • Low Effective Output Capacitance
   
  • This device is RoHS Compliant
   
应用   终端产品
  • DC-DC Converter
  • Boost Inverter
  • UPS
 
  • Solar
  • Charging Station
  • Motor Drive
技术文档及设计资源
仿真模型 (3) 数据表 (1)
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTBG080N120SC1 Active
Pb-free
Halide free
NTBG080N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $5.9999
市场订货至交货的时间(周) : 17 to 20

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG080N120SC1  
 $5.9999 
Pb
H
 Active   
N-Channel
Single
1200
30
80
56
79
175
D2PAK7 (TO-263-7L HV)
外形
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.