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NVBG020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, D2PAK−7L

Datasheet: MOSFET — Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mΩ
Rev. 4 (259kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 1200V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
应用   终端产品
  • High power DCDC
  • Inverter
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVBG020N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVBG020N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $19.5995
市场订货至交货的时间(周) : 8 to 12
Avnet   (2020-08-19 00:00) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVBG020N120SC1  
 $19.5995 
Pb
A
H
P
 Active   
N-Channel
Single
1200
98
20
220
258
175
D2PAK7 (TO-263-7L HV)
外形
Application
Diagram - Block
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