牵引逆变器
概览
主驱逆变器是电动汽车的心脏，为车辆提供扭矩和加速能力。逆变器和其所控制的电机的响应速度直接影响驾驶体验和消费者的满意度。
常见功率水平为40kW到250+kW，这需要非常强大的IGBT和碳化硅（SiC）元器件。我们的牵引逆变器设计，得益于其可扩展性、增强的热性能、以及行业最低电感的封装结构，能够实现最高效率、最先进的功率密度和敏捷的响应速度。当400V-800V的电池为牵引逆变器供电，逆变器部件的额定电压需要达到600V-1200V，同时每相的运行电流水平高达1000A。安森美的EliteSiC和VE-Trac模块解决方案为您的牵引逆变器设计打好坚实的基础，让您的汽车产品功能更加强大和可靠。
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产品
Silicon Carbide (SiC) Modules
SiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200V.
A Silicon Carbide (SiC) Module is a power module that operates with Silicon Carbide semiconductors for its switch. The purpose of a SiC power module is the transformation of electrical power through switches to improve system efficiency.
The primary function of SiC Modules is to transform electrical power. Silicon Carbide offers an advantage over silicon because, with less resistance to move away from the source (due to increased efficiency), SiC devices can operate at a higher switching frequency. A SiC based system is also more compact and lightweight than a silicon solution, allowing for smaller designs. Therefore, SiC devices are the ideal solution for situations where you want to increase efficiency and improve your thermal management.
Silicon Carbide (SiC) MOSFETs Bare Die
onsemi's Silicon Carbide(SiC) bare dies are optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.
IGBT Modules
IGBT Modules are used in traction and in the DC-AC stages of solar inverters, energy storage systems, uninterruptible power supplies and motor drives.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Linear Regulators (LDO)
A portfolio that provides optimum solution for low power, space conscious and low noise designs.
Current Sense Amplifiers
Current sensing requires accurate measurements and onsemi’s current sense amplifiers offer high degree of precision current sensing along with the advantages of wide input common mode range, bidirectional current sensing and high/low side current sensing.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Wired Transceivers & Modems
Modems and transceivers for a variety of data transmission protocols, including FlexRayTM, KNX, M-BUS, LIN, CAN, MAU, HART and Power Line Carrier (PLC).
ESD Protection Diodes
Protection diodes and arrays that are specifically designed to provide ESD and surge protection.
Documents
White Papers
When Planar is Superior to Trench: An In-Depth Look at the Continued Evolution of Silicon Carbide MOSFETs
Application Notes
Impact of Stray Inductance on EliteSiC Power and VE-Trac™ IGBT Module's Switching Characteristics
Application Notes
VE-Trac™️ Direct / Direct SiC Assembly Guide
Application Notes
Short Circuit Protection Circuit Design for High Power Modules
Application Notes
使用隔离式栅极驱动器的实用设计指南
White Papers
Modeling and Validation of a Silicon-Carbide Power Module for Traction Inverters
Collateral Brochure
Overcoming the Challenges of Silicon Carbide to Ensure Application Success
Application Notes
onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations
White Papers
IGBT Technologies and Applications Overview: How and When to Use an IGBT
White Papers
优化混动和电动汽车的能效和性能
评估板/套件
Evaluation Kit
NVH820S75L4SPB-EVK
Evaluation Board
EVBUM2897G-EVB
Evaluation Board
EVBUM2901G-EVB
Evaluation Kit
EVBUM2909G-EVK
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traction inverter