FDMS86181E: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

Datasheet: MOSFET, N-Channel, Shielded Gate, POWERTRENCH - 100 V, 124 A, 4.2 mΩ
Rev. 2 (314kB)
产品概览
查看材料成分
产品更改通知
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
特性   优势
     
  • Shielded Gate MOSFET Technology
 
  • Optimized RDS* Qg Ratio
  • 50% lower Qrr than other MOSFET suppliers
 
  • Reduces Switching Spike (overshoot)
  • Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
   
  • Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
   
  • Lowers switching noise/EMI
   
  • MSL1 robust package design
   
  • 100% UIL tested
   
  • RoHS Compliant
   
应用   终端产品
  • This product is general usage and suitable for many different applications.
  • Primary MOSFET in Isolated DC-DC
  • Synchronous Rectifier
  • Motor Switch
 
  • DC-DC Power Supplies
  • AC-DC Power Supplies
  • Motor Control
技术文档及设计资源
应用注释 (11) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FDMS86181E Active
Pb-free
Halide free
FDMS86181E PQFN-8 483AE 1 260 Tape and Reel 3000 $1.16
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS86181E  
 $1.16 
Pb
H
 Active   
N-Channel
Single
100
20
4
124
2.5
"-"
"-"
4.2
"-"
42
2945
PQFN-8
外形
483AE   
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.