NTD4970N: 单 N 沟道,功率 MOSFET,30V,36A,11mΩ

Datasheet: MOSFET — Power, Single, N-Channel, DPAK/IPAK 30 V, 36 A
Rev. 1 (135kB)
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功率 MOSFET,30 V,36 A,单 N 沟道,DPAK/IPAK
特性   优势
     
  • Optimized Gate Charge
 
  • Improve Signal Quality and Minimize Switching Losses
  • Low Capacitance
 
  • Minimize Driver Loss
  • Low RDS(on)
 
  • Improve Efficiency
  • RoHS Compliant
   
  • Three Package Variations for Design Flexibility
   
应用   终端产品
  • High Side Synchronous DC-DC Converters
 
  • PC and Game Console
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
ONS321A5VGEVB Active
Pb-free
5 Vgs MOSFET Evaluation Board
ONS321B12VGEVB Active
Pb-free
12 Vgs MOSFET Evaluation Board
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTD4970N-1G Obsolete
Pb-free
Halide free
NTD4970N DPAK INSERTION MOUNT 369 1 260 Tube 75  
NTD4970N-35G Lifetime
Pb-free
Halide free
NTD4970N IPAK-3 369AD 1 260 Tube 75 $0.322
NTD4970NT4G Obsolete
Pb-free
Halide free
NTD4970N DPAK-3 369AA 1 260 Tape and Reel 2500  
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 19,050
市场订货至交货的时间(周) : Contact Factory
外形
369AA    369AD    369   
封装
NTD4970N: 单 N 沟道,功率 MOSFET,30V,36A,11mΩ
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5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
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