Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 650 V, 22 A, 125 mΩ, TO-220

添加至我的收藏

概览

SUPERFET V MOSFET is ON Semiconductor’s fifth generation high voltage super−junction (SJ) MOSFET family with outstanding low FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. 600 V SUPERET V series provide design benefits by reduced conduction and switching losses while supporting extreme body diode dVDS/dt ratings at 70 V/ns. Consequently, SUPERFET V FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability for soft switching applications such as PSFB and LLC.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • Ultra Low Gate Charge (Typ. Qg = 39 nC)
  • Low Time Related Output Capacitance (Typ. Coss(tr.) = 520 pF)
  • Optimized Capacitance
  • Excellent body diode performance (low Qrr, robust body diode)
  • 650 V @ TJ = 150 °C
  • Typ. RDS(on) = 100 mΩ
  • 100% Avalanche Tested
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Internal Gate Resistance: 8 Ω

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTP125N60S5FZ

Loading...

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

F

600

125

N-Channel

Single

20

4.8

22

156

~NA~

~NA~

~NA~

39

2213

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :