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Silicon Carbide (SiC) Combo JFETs | UG4SC075011K4S
概览
The UG4SC075011K4S "Combo-JFET" integrates both a 750V SiC
JFET and a Low Voltage Si MOSFET into a single TO-247-4L package.
This innovative approach allows users to create circuitry that would
enable a normally-off switch while leveraging the benefits of a
normally-on SiC JFET. These benefits include ultra-low on-resistance
(RDS(on)) to minimize conduction losses and the exceptional robustness
characteristic of a simplified JFET device structure, making it capable
of handling the high-energy switching required in circuit protection
applications. For switch-mode power conversion application, this
device provides separate access to the JFET and MOSFET gates for
improved speed control and ease of paralleling multiple devices.
- Solid State / Semiconductor Circuit Breaker
- Solid state / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
- High power switch mode converters (>25kW)
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
- Low RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+FETs)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- short circuit rated
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