Silicon Carbide (SiC) Diodes | FFSH20120A-F085

SiC 硅肖特基二极管，1200V，20A

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碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供出色的开关性能，且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和出色的热性能，使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和降低的成本。

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  • Max Junction Temperature 175 °C
  • Avalanche Rated 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 qualified and PPAP Capable

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FFSH20120A-F085

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Pb

A

H

P

TO-247-2

340CL

NA

0

TUBE

450

Y

D1

Single

1200

20

1.75

135

200

$6.6981

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可靠性数据

Die Related Summary Data

Device: FFSH20120A-F085

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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