Silicon Carbide (SiC) MOSFETs | NTBL060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

量产中

相似产品推荐

数据表

购买

概览

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • UPS / ESS
  • Solar

  • Max Junction Temperature 175°C
  • Leadless thin SMD package
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (Qg(tot) = 74 nC)
  • Low Effective Output Capacitance (Coss = 113 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 44 mΩ @ Vgs : 18V
  • 650V rated
  • 100% Avalanche Tested
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 3.9 Ω

工具和资源

与NTBL060N065SC1相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

产品参数及购买信息

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

参考价格

NTBL060N065SC1

联系销售

量产中

CAD Model

Pb

A

H

P

H-PSOF8L 9.90x10.38x2.30, 1.20P

100DC

1

260

REEL

2000

No

M2

650

46

44

74

133

175

$4.6038

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。