Silicon Carbide (SiC) MOSFETs | NVBG075N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, D2PAK−7L

Active

数据表

产品

相似产品推荐

概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive

  • On Board Charger
  • DC/DC Converter

  • High Junction Temperature (Tj = 175°C)
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (QG(tot) = 59 nC)
  • Low Output Capacitance (Coss = 109 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 56 mΩ
  • 650V rated
  • 100% UIL Tested
  • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 5.6 Ω

Tools and Resources

Product services, tools and other useful resources related to NVBG075N065SC1

CAD Model

CAD模型

物质成分

产品更改通知

Elite Power Simulator

PLECS Model Generator

产品列表

需要栅极驱动器？

如需购买产品或样品，请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NVBG075N065SC1

Contact Sales

Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

260

REEL

800

F

M2

650

37

56

59

109

175

$7.2774

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.