Silicon Carbide (SiC) MOSFETs | NVH4L045N065SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 33 mohm, 650V, M2, TO247−4L

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概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive DC/DC and PFC
  • Automotive On Board Charger
  • Qualified for Automotive According to AEC−Q101
  • 650V rated
  • Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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NVH4L045N065SC1

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Pb

A

H

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TO-247-4

340CJ

NA

0

TUBE

450

F

M2

650

55

33

105

162

175

$11.2004

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