NCP51705: SiC MOSFET 驱动器,低压侧,单个 6 A 高速
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NCP51705 驱动器主要用于驱动 SiC MOSFET 晶体管。为了实现最低的导通损耗,该驱动器能够为 SiC MOSFET 器件提供最大门极电压。通过在开启和关断期间提供高峰值电流,开关损耗也得以最大程度减少。为了提高可靠性,dV/dt 抗扰性甚至更快的关断时间,NCP51705 可以使用板上电荷泵来产生用户可选择的负电压轨。对于隔离应用,NCP51705 还提供了外部可访问的 5 V 轨,为数字或高速光隔离器辅助侧供电。
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评估/开发工具信息
产品 | 状况 | Compliance | 简短说明 | 行动 | |
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NCP51705SMDGEVB | Active |
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Application daughter-card for NCP51705 SiC MOSFET driver | ||
SEC-6D6KW-OBC-SIC-GEVB | Active |
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6.6kW OBC SiC model | ||
SECO-GDBB-GEVB | Active |
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Gate drivers plug-and-play ecosystem |
Availability & Samples
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Specifications
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Intaractive Block Diagram
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Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP51705MNTXG
$1.6133
Pb
A
H
P
Active
SiC MOSFET
1
Single
Non-Isolated
N/A
28
6000 / 6000
8
8
50
WQFN-24
外形
510BE
Application
Diagram - Block
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