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NSS12500UW3: Low VCE(sat) Transistor, PNP, 12 V, 5.0 A

Datasheet: Low VCE(sat) Transistor, PNP, 12 V, 8.0 A
Rev. 1 (108.0kB)
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Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性   优势
     
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
 
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NSS12500UW3T2G Active
Pb-free
Halide free
NSS12500UW3 WDFN-3 506AU 1 260 Tape and Reel 3000 $0.3237
市场订货至交货的时间(周) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 15,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
NSS12500UW3T2G  
 $0.3237 
Pb
H
 Active   
PNP
Low VCE(sat)
0.26
5
12
12
7
0.9
0.9
250
-
100
1.5
WDFN-3
外形
506AU   
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