绝缘门双极晶体管 (IGBT)


This portfolio of IGBTs offer an optimum performance by balancing VCE(sat) and Eoff losses and controllable turnoff Vce overshoot. These IGBTs offer maximum reliability and performance from positive temperature co-efficient, low saturation voltage (VCE(sat)), very low switching and conduction losses, and fast switching. They are also well suited for high performance power conversion applications (PFC), DC-DC converters, industrial inverters, UPS, and EV charging stations. The portfolio even includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive industry applications.

Featured New Products

AFGHL75T65SQDC: IGBT with SiC copack diode
  • SiC schottky co-pack diode
  • Fast switching IGBT
  • AEC-Q101 qualified (automotive compatible)
AFGY100T65SPD: IGBT - 650 V 100 A FS3 for EV Traction Inverter Application
  • Low VCE(sat) voltage
  • Soft recovery diode
  • Tight parameter distribution
AFGY120T65SPD: IGBT - 650 V 120 A FS3 for EV Traction Inverter Application
  • Low VCE(sat) voltage
  • Soft recovery diode
  • Tight parameter distribution

Product Family

EV Traction Inverter IGBTs

Field Stop 3 IGBTs for electric vehicle traction inverter application.

Automotive IGBTs

Products for automtoive applications.

Non-Automotive IGBTs

Products for non-automtoive applications.

VE-Trac Chip, Bare Die

Bare Dies for automotive applications.


Optimized for driving the coil in the harsh environment of automotive ignition systems.

Shorted-anode IGBTs

Offer superior conduction and switching performances for soft switching applications.

Induction Heating IGBTs

This technology provides superior performance in demanding switching applications and is optimized for induction heating solutions.


VE-Trac Innovative Traction Inverter Solution

Providing two power module options that utilize our latest 750V and 1200V IGBT technologies to support 400 V and 800 V battery voltages...

Electric Vehicle On-Board Charger Walkthrough

On-Board Charger solution walkthrough.

Wide Band Gap Demonstration at APEC 2017

This video highlights the wide bandgap demo using a double pulse tester to show the recovery speed of a Silicon Carbide (SiC) diode.

Product Resources

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Application Note

Reading ON Semiconductor IGBT Datasheets

The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating. If the application requirements are well understood, the correct IGBT can easily be selected from the electrical properties provided in the manufacturers’ datasheet. This application note describes the electrical parameters provided in the ON Semiconductor IGBT datasheet.

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Application Note

Reliability and Quality for IGBTs

In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability. Both are interrelated − reliability is the quality extended over the expected life of the product. For any manufacturer to remain in business, their products must meet and/or exceed the basic quality and reliability standards. ON Semiconductor, as a semiconductor supplier, has successfully achieved these standards by supplying product for the most strenuous applications to perform in the most adverse environments.

AND9072 Application Note Thumbnail

Application Note

Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance. Unlike the MOSFETs and BJTs, the magnitude of the gate-emitter supply voltage of an IGBT has a more significant impact on the performance of the device. The magnitude of the gate-emitter voltage impacts the turn-on loss and short circuit survival capability of the devices.

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Application Note

Motor Control IGBTs and Free‐Wheeling Diodes

Using IGBTs in motor control environments requires several attributes which can be divided in two categories. The short circuit rating and SOAs are an indication of the robustness of a device. The conduction and switching energy losses are measures of the efficiency of a device. This application note will examine ON Semiconductor’s IGBTs and free-wheeling diodes and show how the losses and ruggedness issues affect the selection of an IGBT for a motor drive application.

VE-Trac Direct and VE-Trac Dual Blog Thumbnail


Electric Vehicles Powered by Power Modules VE-Trac Direct and VE-Trac Dual

Interview with Jonathan Liao one of our product line managers responsible for the VE-Trac direct and dual product family...

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