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AFGB30T65SQDN: IGBT 650V FS4 高速版,适用于 OBC 应用,D2PAK 封装

Datasheet: IGBT for Automotive Applications
Rev. 0 (151kB)
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采用新型场截止第 4 代 IGBT 技术且通过了 AEC-Q101 认证。AFGB30T65SQDN 具有最佳性能以及低导通损耗和开关损耗,可在各种应用中实现高效运行。
特性   优势
     
  • AEC-Q101 Qualified
 
  • For Automotive
  • VCE(sat) = 1.6 V (typ.) @ IC = 30 A
 
  • Low conduction loss
  • Low VF soft recovery co-packaged diode
 
  • Low noise and conduction loss
应用   终端产品
  • Automotive On Board Charger
  • Automotive DC/DCC converter for HEV
 
  • EV/PHEV
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
AFGB30T65SQDN Active
AEC Qualified
PPAP Capable
Pb-free
AFGB30T65SQDN, 650V, 30A, D2PAK D2PAK-3 / TO-263-2 418AJ 1 260 Tape and Reel 800 $2.2571
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
AFGB30T65SQDN  
 $2.2571 
Pb
A
P
 Active   
650
30
1.6
1.5
0.16
0.786
131
56
-
-
220
Yes
D2PAK-3 / TO-263-2
外形
418AJ   
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