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EFC4C002NL: 用于 3 节锂电子电池保护的双 N 沟道功率 MOSFET,30 V,30 A,2.6 mΩ

Datasheet: MOSFET – Power, Dual, N-Channel, for 3-Cells Lithium-ion Battery Protection, WLCSP8 30 V, 2.6 mΩ, 30 A
Rev. 1 (205kB)
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此 N 沟道功率 MOSFET 是使用安森美半导体的沟槽技术生产的,专门用于最大程度减小门极电荷,实现超低导通电阻。此器件适用于无人机或笔记本电脑应用。
特性   优势
     
  • Ultra Low On-Resistance
 
  • Improves efficiency by reducing conduction losses
  • Low Gate Charge
 
  • Ease of drive, faster turn-on
  • RoHS compliance
 
  • Environment friendliness
  • High Speed Switching
 
  • Reduces dynamic power losses
  • Common-Drain type
   
应用   终端产品
  • 3-Cells Lithium-ion Battery Charging and Discharging Switch
 
  • Drone
  • Notebook PC
技术文档及设计资源
数据表 (1) 封装图纸 (1)
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
EFC4C002NLTDG Active
Pb-free
Halide free
EFC4C002NL WLCSP-8 567MC NA Tape and Reel 5000 $1.0604
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
EFC4C002NLTDG  
 $1.0604 
Pb
H
 Active   
N-Channel
Dual
30
20
2.2
30
2.6
-
Q1=Q2=5.1
Q1=Q2=2.6
21.7
45
6200
WLCSP-8
外形
567MC   
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