FCH165N65S3R0: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-247
|
|
»浏览可靠性数据
»查看材料成分 » 产品更改通知 |
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
特性 | 优势 | ||||
---|---|---|---|---|---|
|
|
||||
|
|
||||
|
|
||||
|
|
||||
|
|||||
|
|||||
|
|||||
|
应用 | 终端产品 | |
---|---|---|
|
|
Availability & Samples
|
Specifications
|
Intaractive Block Diagram
|
|
|
|
|
|
|
|
|
|||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
外形 |
|
|
|
|
|||||||||||||
FCH165N65S3R0-F155 | Active |
|
FCH165N65S3R0 | TO-247-3 | 340CH | NA | Tube | 450 | $1.4837
|
市场订货至交货的时间(周) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCH165N65S3R0-F155
$1.4837
Pb
A
H
P
Active
N-Channel
Single
650
30
4.5
19
154
165
39
TO-247-3
外形
340CH
Application
Diagram - Block
设计支援 |