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FCP360N65S3R0: 功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,10 A,360 mΩ,TO-220

Datasheet: MOSFET–Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 10 A, 360 mΩ
Rev. 3 (452kB)
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SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进工艺专用于最大程度降低导电损耗,提供卓越的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更简单的设计实施。
特性   优势
     
  • 700 V @ TJ = 150 °C
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
 
  • Low switching loss
  • Ultra Low Gate Charge (Typ. Qg = 18 nC)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Typ. RDS(on) = 310 mΩ
   
  • Internal Gate Resistance: 1 Ω
   
应用   终端产品
  • Computing
  • Consummer
  • Industrial
 
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FCP360N65S3R0 Active
Pb-free
Halide free
FCP360N65S3R0 TO-220-3 340AT NA Tube 800 $0.6961
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCP360N65S3R0  
 $0.6961 
Pb
H
 Active   
N-Channel
Single
650
30
4.5
10
83
-
-
360
-
18
730
TO-220-3
外形
340AT   
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