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NTHD3101F: P 沟道 ChipFET™ 功率 MOSFET 和肖特基二极管 -20V -4.4A 80mΩ

Datasheet: MOSFET — Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode -20 V, -4.4 A, 4.1 A
Rev. 4 (130kB)
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功率 MOSFET -20V -4.4A 80mΩ P 沟道 ChipFET™4.1 A 肖特基势垒二极管
特性
 
  • Leadless SMD Package Featuring a MOSFET and Schottky Diode
  • 40% Smaller than TSOP-6 Package
  • Leadless SMD Package Provides Great Thermal Characteristics
  • Independent Pinout to each Device to ease Circuit Design
  • Trench P-Channel for Low On Resistance
  • Ulta Low VF Schottky
应用
  • Li-Ion Battery Charging
  • High Side DC-DC Conversion Circuits
  • High Side Drive for Small Brushless DC Motors
  • Power Management in Portable, Battery Powered Products
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTHD3101FT1G Active
Pb-free
Halide free
NTHD3101F ChipFET-8 1206A-03 1 260 Tape and Reel 3000 $0.2316
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : >1K
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHD3101FT1G  
 $0.2316 
Pb
H
 Active   
P-Channel
with Schottky Diode
-20
8
1.5
3.2
1.1
85
64
-
8.6
7.4
680
ChipFET-8
外形
1206A-03   
封装
NTHD3101F: P 沟道 ChipFET™ 功率 MOSFET 和肖特基二极管 -20V -4.4A 80mΩ
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