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NTMFD4C20N: 双 N 沟道,功率 MOSFET,30V

Datasheet: MOSFET — Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A
Rev. 4 (172kB)
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双 N 沟道,功率 MOSFET,30 V,高压侧 18 A / 低压侧 27 A,双 N 沟道,SO8FL
特性
 
  • Co−Packaged Power Stage Solution to Minimize Board Space
  • Minimized Parasitic Inductances
  • Optimized Devices to Reduce Power Losses
  • RoHS Compliant
应用
  • DC−DC Converters
  • System Voltage Rails
  • Point of Load
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
DUALASYMA5VGEVB Active
Pb-free
Single Phase Buck Converter Dual Asymmetrical AG Evaluation Board
DUALASYMB12VGEVB Active
Pb-free
Single Phase Buck Converter Dual Asymmetrical BG Evaluation Board
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFD4C20NT1G Active
Pb-free
Halide free
NTMFD4C20N, Dual N-Channel Power SO-8FL Dual / DFN-8 506BX 1 260 Tape and Reel 1500 $0.4667
NTMFD4C20NT3G Obsolete
Pb-free
Halide free
NTMFD4C20N, Dual N-Channel Power SO-8FL Dual / DFN-8 506BX 1 260 Tape and Reel 5000  
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFD4C20NT1G  
 $0.4667 
Pb
H
 Active   
N-Channel
Dual
30
20
2.1
18.2
1.88
-
Q1: 10.8 , Q2: 5.2
Q1: 7.3 , Q2: 3.4
9.7
9.3
Q1: 970, Q2: 1950
SO-8FL Dual / DFN-8
外形
506BX   
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