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NTMFS4C029N: 单 N 沟道,功率 MOSFET,30V,46 A,5.88mΩ

Datasheet: MOSFET — Power, Single, N-Channel, SO-8 FL 30 V, 46 A
Rev. 1 (134kB)
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功率 MOSFET,30 V,46 A,单 N 沟道,SO−8 FL
特性
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant
应用
  • CPU Power Delivery
  • DC−DC Converters
技术文档及设计资源
数据表 (1) 封装图纸 (1)
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFS4C029NT1G Active
Pb-free
Halide free
NTMFS4C029N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 1500 $0.15
NTMFS4C029NT3G Active
Pb-free
Halide free
NTMFS4C029N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 5000 $0.2665
市场订货至交货的时间(周) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 403,500
市场订货至交货的时间(周) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 10,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFS4C029NT1G  
 $0.15 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
46
0.69
-
9
5.88
15
18.9
987
SO-8FL / DFN-5
NTMFS4C029NT3G  
 $0.2665 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
46
0.69
-
9
5.88
15
18.9
987
SO-8FL / DFN-5
外形
488AA   
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