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NTHL020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 0 (228kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
 
  • Typical RDS(on) = 20mΩ
  • High Speed Switching and Low Capacitance
 
  • Coss = 260pF
  • 1200V
   
  • 100% UIL Tested
   
应用   终端产品
  • PFC
  • Boost Inverter
  • PV Charging
 
  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
  • Charging Stations
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTHL020N120SC1 Active
Pb-free
Halide free
NTHL020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $22.6408
市场订货至交货的时间(周) : 8 to 12
ON Semiconductor   (2020-09-02 00:00) : 19,800

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTHL020N120SC1  
 $22.6408 
Pb
H
 Active   
N-Channel
Single
1200
103
20
203
260
175
TO-247-3LD
外形
340CX   
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