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NVHL060N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel, 900 V, 60 mOhm, 46 A
Rev. 1 (691kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • Typical RDSon
 
  • 60 mΩ
  • High Speed Switching and Low Capacitance
 
  • Coss = 113pF
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
  • Devices are Pb−Free and are RoHS Compliant
   
应用   终端产品
  • PFC
  • OBC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
SEC-6D6KW-OBC-TTP-GEVB Active
Pb-free
A 6.6kW OBC evaluation board using Totem pole topology
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVHL060N090SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL060N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 60 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $5.3741
市场订货至交货的时间(周) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 4,500

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL060N090SC1  
 $5.3741 
Pb
A
H
P
 Active   
N-Channel
Single
900
46
60
87
113
175
TO-247-3LD
外形
340CX   
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Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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