NVHL060N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, TO247−3L
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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评估/开发工具信息
| 产品 | 状况 | Compliance | 简短说明 | 行动 | |
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| SEC-6D6KW-OBC-SIC-GEVB | Active |
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6.6kW OBC SiC model | ||
| SEC-6D6KW-OBC-TTP-GEVB | Active |
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A 6.6kW OBC evaluation board using Totem pole topology |
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Availability & Samples
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Specifications
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| NVHL060N090SC1 | Active |
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NVHL060N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 60 m?, TO247?3L | TO-247-3LD | 340CX | 1 | 260 | Tube | 450 | $5.3741 | ||||||||
| 市场订货至交货的时间(周) | : | Contact Factory |
| ON Semiconductor (2020-09-02 00:00) | : | 4,500 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL060N090SC1
$5.3741
Pb
A
H
P
Active
N-Channel
Single
900
46
60
87
113
175
TO-247-3LD
外形
340CX
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