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AFGHL50T65SQDC: 混合型 IGBT,650V,50A,场截止 4 沟槽 IGBT,带 SiC-SBD

Datasheet: Hybrid IGBT, 50 A, 650 V
Rev. 2 (241kB)
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安森美半导体的新型混合 IGBT 系列采用新型场截止 IGBT 和 SiC SBD 技术,为硬开关应用提供了最佳性能。该器件将硅基 IGBT 与 SiC 肖特基势垒二极管联合封装,在硅基解决方案的较低性能和全碳化硅解决方案的较高成本之间实现了绝佳平衡。
特性   优势
     
  • Copacked with SiC schottky barrier diode
 
  • Ultra low reverse recovery loss
  • Maximum Junction Temperature, Tj=175°C
 
  • Higher reliability
  • Automotive Qualified
   
  • Very low switching and conduction losses
   
  • Positive temperature co-efficient
   
  • 100% of the parts are dynamically tested
   
  • Tight parameter distribution
   
应用   终端产品
  • Automotive
  • Industrial Inverter
  • DC-DC Converter
  • PFC, Totem Pole Bridgeless
  • Hard Switching
 
  • xEV On & Off board charger
  • UPS
  • Solar Inverter
  • HVAC
技术文档及设计资源
仿真模型 (3) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
AFGHL50T65SQDC Active
AEC Qualified
PPAP Capable
Pb-free
AFGHL50T65SQDC TO-247-3LD 340CX NA Tube 450 $5.9999
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : <1K
ON Semiconductor   (2020-09-02 00:00) : 3,150

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
AFGHL50T65SQDC  
 $5.9999 
Pb
A
P
 Active   
650
50
1.6
1.45
94
Yes
TO-247-3LD
外形
340CX   
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