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FDB1D7N10CL7: 功率 MOSFET,N 沟道,Standard Gate,100 V,268 A,1.7 mΩ

Datasheet: N-Channel Shielded Gate PowerTrench MOSFET
Rev. 2 (183kB)
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此 N 沟道 MV MOSFET 是使用安森美半导体先进的 Power Trench 工艺生产的,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。
特性   优势
     
  • Low Qrr
 
  • Miniuze switching loss
  • Soft recovery body diode
 
  • Reduced EMI and voltage spike
  • Low RDS(on)
 
  • Minimize conduction loss
  • Small Footprint (5 x 6 mm)
 
  • Compact design
  • RoHS compliant
   
应用   终端产品
  • Motor Control
  • DC-DC Converters
  • Battery Management
  • Solar Inverters
 
  • Fork Lifts, Multi Rotor Drones, Power Tools
  • Power Supplies
  • Battery Packs and Chargers
  • Power Optimizers
技术文档及设计资源
仿真模型 (3) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
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状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FDB1D7N10CL7 Active
Pb-free
Halide free
FDB1D7N10CL7, 100V PTNG NMOS D2PAK-7 / TO-263-7 418AY 1 245 Tape and Reel 800 $3.7388
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDB1D7N10CL7  
 $3.7388 
Pb
H
 Active   
N-Channel
Single
100
±20
4
268
250
-
-
1.75
-
116
8285
D2PAK-7 / TO-263-7
外形
418AY   
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