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NTLJD3119C: 互补,功率 MOSFET,20V

Datasheet: MOSFET — Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A
Rev. 5 (157kB)
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功率 MOSFET,20 V/−20 V,4.6 A/−4.1 A,互补,2x2 mm,WDFN 封装
特性   优势
     
  • Complementary N-Channel and P-Channel MOSFET
 
  • Easy Circuit Layout, Circuit Design Flexibility
  • WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
 
  • Excellent Thermal Conduction
  • Leading Edge Trench Technology for Low On Resistance
   
  • 1.8 V Gate Threshold Voltage
   
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
   
应用   终端产品
  • Synchronous DC−DC Conversion Circuits
  • Load/Power Management of Portable Devices
  • Color Display and Camera Flash Regulators
 
  • PDA
  • Cellular Phones
  • Hard Drives
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTLJD3119CTAG Obsolete 
Pb-free
Halide free
NTLJD3119C WDFN-6 506AN 1 260 Tape and Reel 3000  
NTLJD3119CTBG Active
Pb-free
Halide free
NTLJD3119C WDFN-6 506AN 1 260 Tape and Reel 3000 $0.218
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTLJD3119CTBG  
 $0.218 
Pb
H
 Active   
Complementary
Dual
±20
8
1
3.8
1.5
N:85, P:135
N:65, P:100
-
5.5
3.7
N: 271, P: 531
WDFN-6
外形
506AN   
封装
NTLJD3119C: 互补,功率 MOSFET,20V
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