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MC14012B: 双路 4 输入 NAND 门极

Datasheet: Dual 4−Input NAND Gate
Rev. 11 (99kB)
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此类双路 4 输入 NAND 门极是在单片结构中使用 P 和 N 沟道增强模式器件构建的(互补 MOS)。其主要用途是需要低功耗和/或高抗扰度的场合。
特性
 
  • Supply Voltage Range = 3.0 Vdc to 18 Vdc
  • All Outputs Buffered
  • Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
  • Double Diode Protection on All Inputs
  • Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices
  • Pb-Free Packages are Available*
技术文档及设计资源
仿真模型 (2) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
外形
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
MC14012BDG Active
Pb-free
Halide free
MC14012B SOIC-14 751A-03 1 260 Tube 55 $0.1827
MC14012BDR2G Active
Pb-free
Halide free
MC14012B SOIC-14 751A-03 1 260 Tape and Reel 2500 $0.1653
NLV14012BDG Lifetime
AEC Qualified
PPAP Capable
Pb-free
Halide free
MC14012B SOIC-14 751A-03 1 260 Tube 55 $0.2193
NLV14012BDR2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
MC14012B SOIC-14 751A-03 1 260 Tape and Reel 2500 $0.2003
市场订货至交货的时间(周) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 10,890
FutureElectronics   (2020-08-19 00:00) : >1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Type
Channels
VCC Min (V)
VCC Max (V)
tpd Max (ns)
IO Max (mA)
Package Type
MC14012BDG  
 $0.1827 
Pb
H
 Active   
NAND
2
3
18
130
null
SOIC-14
MC14012BDR2G  
 $0.1653 
Pb
H
 Active   
NAND
2
3
18
130
null
SOIC-14
NLV14012BDR2G  
 $0.2003 
Pb
A
H
P
 Active   
NAND
2
3
18
null
null
SOIC-14
外形
751A-03   
封装
MC14012B: 双路 4 输入 NAND 门极
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