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FFSP3065B-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Datasheet: Silicon Carbide Schottky Diode 650 V, 30 A
Rev. 4 (211kB)
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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
特性   优势
     
  • Max Junction Temperature 175C
 
  • Tj = 175°C
  • Avalanche Rated 144 mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 Qualified and PPAP capable
   
应用   终端产品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
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类型
数量
FFSP3065B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSP3065B-F085 TO-220-2 340BB NA Tube 800 $4.4799
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSP3065B-F085  
 $4.4799 
Pb
A
H
P
 Active   
Automotive
Single
650
30
1.7
120
160
TO-220-2
外形
340BB   
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