智慧楼宇和城市
智能视觉技术建设更智慧的楼宇和城市
智能楼宇利用智能物联网（IoT）实现设备的远程控制、自动化和集成，获得安全、高效、自适应的居家和办公环境。从照明和安防到娱乐和能源管理，所有设备都能无缝协作，实现互联体验。
概览
智慧楼宇建立在一个安全、可扩展的互联架构之上，将传感器、执行器、电力电子设备和物联网边缘设备集成为一个协调的生态系统。这些设备可在本地或通过云端进行通信，以实现自动化、远程诊断以及照明、暖通空调、门禁控制和电器控制等功能的实时优化。业主或设施管理人员可以通过手机、平板电脑或个人电脑远程调节温度、监控安全、管理能源使用或控制连接的负载。
现代智慧楼宇还可集成了小型电动车（SEVs）、电动自行车（e-bike）、送货机器人和微型移动平台，这些都依赖于智能电池管理、高效电源转换和安全充电。智能充电底座采用负载平衡技术和能量感知调度来降低峰值需求，最大限度地利用可再生能源或低电价能源。安森美利用高效MOSFET、SiC/GaN功率器件、电流检测放大器和电池管理集成电路来提高充电器的紧凑性、安全性和运行时间。
汽车机电维修工厂的电池供电工具也可受益于物联网。智能充电器可报告充电状态（SoC）、健康状态（SoH）、循环次数和预测性维护数据。安森美DC-DC转换器、功率级和保护IC可提高充电效率、热性能和电池安全性。
智能建筑能源系统的一个关键组成部分是热泵，它通过逆变器驱动的压缩机来传输热量。热泵与楼宇物联网相连，可利用AI算法、占用数据和天气预报等信息优化能源消耗。在半导体的利用方面，热泵依靠碳化硅MOSFET、栅极驱动器、PFC 控制器和电流/温度传感器实现变速运行、高COP和总能耗的降低。
Sub-Solutions
产品
Bluetooth Low Energy
RSL15
Bluetooth® 5.2 Secure Wireless MCU
Ethernet Controllers
NCN26010
Ethernet Controller, 10 Mb/s, Single-Pair, MAC + PHY, 802.3cg, 10BASE−T1S Compliant
Ethernet Controllers
NCN26000
10BASE-T1S Ethernet PHY with MII interface
PoE Powered Devices
NCL31010
PoE Interface LED Driver, Visible Light Communication capable
Linear LED Drivers
NCL31001
Intelligent LED Driver, Multi-Channel Enabled with Precision Dimming, Diagnostics and Power Metrology
Image Sensors
A broad portfolio of industry leading image sensors that satisfy requirements of every possible end application from wearables and consumer electronics to demanding industrial and automotive applications.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness.
These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.
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