智慧楼宇和城市
Intelligent Vision for Smarter Buildings and Cities
Smart buildings use intelligent IoT networks to enable remote control, automation, and integration of devices making homes and offices secure, efficient, and adaptable. From lighting and security to entertainment and energy management, everything works together seamlessly for a connected experience.
Bluetooth Low Energy
The onsemi RSL15 is an ultra−low power Bluetooth Low Energy 5.2 MCU for secure and efficient connected building and smart applications.
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10BASE-T1S: Ethernet at the Edge
10BASE‑T1S delivers robust, cost‑effective Ethernet to the edge, enabling seamless multi‑drop connectivity for sensors and controllers in industrial networks.
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产品
Bluetooth Low Energy
RSL15
Bluetooth® 5.2 Secure Wireless MCU
Ethernet Controllers
NCN26010
Ethernet Controller, 10 Mb/s, Single-Pair, MAC + PHY, 802.3cg, 10BASE−T1S Compliant
Ethernet Controllers
NCN26000
10BASE-T1S Ethernet PHY with MII interface
PoE Powered Devices
NCL31010
PoE Interface LED Driver, Visible Light Communication capable
Linear LED Drivers
NCL31001
Intelligent LED Driver, Multi-Channel Enabled with Precision Dimming, Diagnostics and Power Metrology
Image Sensors
A broad portfolio of industry leading image sensors that satisfy requirements of every possible end application from wearables and consumer electronics to demanding industrial and automotive applications.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness.
These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.
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