储能系统
实现可靠高效的储能系统
安森美为工业和可再生能源应用提供下一代储能解决方案。凭借EliteSiC功率半导体、先进的仿真工具和强大的设计资源，我们实现了高效、可靠和可扩展的电池储能系统（BESS）。
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产品
IGBT Modules
NXH600N105L7F5S1HG
IGBT Module, I-type NPC 1050 V, 600 A IGBT
IGBT Modules
NXH800H120L7QDSG
Qdual3 1200 V 800 A Half Bridge IGBT Module
Silicon Carbide (SiC) Modules
NXH003P120M3F2PTNG
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH007F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH011F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Silicon Carbide (SiC) MOSFETs
NTBG022N120M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
Silicon Carbide (SiC) MOSFETs
NTBG023N065M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
IGBTs
FGY4L160T120SWD
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A
Gate Drivers
NCP51752
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control
Gate Drivers
NCP51563
5 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing
Documents
White Papers
优化户用太阳能系统能效、可靠性和成本
White Papers
Common IGBT Topologies Used in Energy Infrastructure Applications
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
Application Notes
onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
Tutorial
“为 EliteSiC 匹配栅极驱动器”教程
Application Notes
安森美新款 Elite Power 仿真工具和 PLECS 模型自助生成工具的技术优势
Collateral Brochure
Overcoming the Challenges of Silicon Carbide to Ensure Application Success
评估板/套件
Evaluation Board
SECO-NCD57000-GEVB
Application daughter-card for NCD57000 IGBT gate driver
Evaluation Board
NCP-NCV51561TO2474LGEVB
The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.
Evaluation Board
NCP-NCV51152TO2474LGEVB
The NCP/V51152 is a family of isolated single−channel gate driver with 4.5 A / 9 A source and sink peak current respectively.
Evaluation Board
SECO-HVDCDC1362-40W-GEVB
SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.
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energy storage system