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高精度电池化成解决方案

适用于电池化成设备的可扩展电源解决方案,提供超高精度的充放电控制、高效率和能量回收功能,以加速电动汽车和储能设备的制造。

高能效电池化成系统

电池化成是先进电池制造技术中的一个关键阶段,通过精确控制充放电循环来激活新组装的电芯,从而形成固态电解质界面膜(SEI)。 该过程不仅决定了电池的可用容量、长期可靠性和安全性,同时也是电池生产中耗时最长、资本投入最大的环节之一。现代电池化成设备以高精度、多通道开关模式电源(SMPS)平台的形式运行,能够通过数千个并行通道输出和吸收直流电。 随着全球对电动汽车(EV)和储能系统(ESS)需求的加速增长,化成系统已成为生产中的关键瓶颈,这推动了对更高吞吐量、更精确的电气控制以及能源效率大幅提升的需求。

安森美的先进功率电子器件正在重塑电池化成系统的架构。 碳化硅(SiC)和氮化镓(GaN)等宽禁带(WBG)技术可实现更高的开关频率、更低的损耗和更高的功率密度,从而支持快速化成、双向能量流和模块化系统设计的实现。 再生架构现可将放电能量回馈至其他通道或电网,使系统效率突破90%,并显著降低散热和基础设施需求。 结合先进的AC-DC功率因数校正(PFC)、隔离DC-DC级以及大电流多通道输出转换器,这些创新使电池制造商能够缩短化成时间、提高能量利用率,并为下一代千兆工厂提供可靠的规模扩展能力。

Block Diagrams

产品

Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

Silicon Carbide (SiC) Cascode JFETs
Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.
Gallium Nitride (GaN) FETs
GaNEXUSTM Gallium Nitride (GaN) FETs are enhancement‑mode discrete GaN HEMTs that leverage wide‑bandgap material properties to deliver fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors. These characteristics enable higher operating frequencies, reduced magnetics, and increased power density across low/medium, high and ultra-high voltage power conversion applications.
Gallium Nitride (GaN) Integrated Power
GaNEXUSTM Integrated Power includes GaNEXUS Drive, GaNEXUS Smart, and GaNEXUS Control, where each combines a GaN switch together with potential combination of additional features: gate driver, current sensing, protection, and control, in a single device to simplify design, reduce parasitics, and accelerate time to market.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
IGBTs
Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
AC-DC Power Conversion
Offline AC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.
DC-DC Power Conversion
A product portfolio for DC-DC charge pumps, controllers, converters, and regulators.
Amplifiers & Comparators
Product portfolio for operational amplifiers (op amp), audio amplifiers, video amplifiers, current sense amplifiers, and comparators.

Documents

Application Notes
T2PAK: 适用于汽车和工业高压应用的顶部散热封装
Application Notes
Using Cascode SiC JFETs in LLC Primary
Application Notes
Design of a Flyback Converter Using Source‐Switched SiC JFET
White Papers
SiC Cascode JFET:轻松实现从硅向碳化硅的过渡
Application Notes
并联 SiC FET
White Papers
3 kW Totem-Pole PFC and Secondary-Side Regulated LLC Power Supply Using SiC MOSFETs
Tutorial
“为EliteSiC匹配栅极驱动器”教程
Collateral Brochure
工业级 LDO 选型指南
Reference Designs
1 kW Universal Input 48 V Output Power Supply Reference Design

评估板/套件

Evaluation Board
NCP1681CCM1KWGEVB
CCM Totem pole PFC 1000 W design with Gate driver integrated GaNFETs
Evaluation Board
NCP1680CRM300WGEVB
CrM Totem pole PFC 300 W design with discrete GaNFETs
Evaluation Board
NCP5183SYNCBUCKGEVB
Variable DC Input, Open Loop Synchronous Buck Evaluation Board
Evaluation Board
NCP51810GAN1GEVB
100V eGaN Half Bridge Gate Driver Evaluation Board
Evaluation Board
NCP-NCV51561D2PAK7LGEVB
NCP/NCV51561 EVB OPN
Evaluation Board
NCP13994MM360GEVB
All-in-One 360 W power supply using NCP1618, NCP13994, NCP4318 and NCP431

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常见问题解答

Formation can take 10–20 hours or more per cell and must be performed on every unit with tight current and voltage accuracy. As battery demand scales, this slow, energy‑intensive step limits factory throughput and accounts for a significant share of equipment cost and floor space, especially in high‑volume EV and energy storage manufacturing.

Battery formation equipment functions as a large, multi‑channel switched‑mode power supply platform. Power electronics enable ultra‑precise current and voltage control, high parallelism across thousands of channels, and efficient handling of both charge and discharge energy, which is essential for accuracy, scalability, and energy efficiency in modern formation lines.

Bidirectional architectures recover energy during cell discharge and reuse it within the system or feed it back to the grid. Instead of dissipating discharge energy as heat, regenerative designs dramatically improve system efficiency, reduce cooling requirements, and lower operating costs, enabling round‑the‑clock operation with much higher overall energy utilization.

Wide‑bandgap devices such as SiC and GaN enable higher switching frequencies, lower losses, and higher operating temperatures. This translates into higher power density, improved efficiency, smaller passive components, and reduced cooling requirements, all of which are critical for compact, scalable, and energy‑efficient formation systems.

一个典型的系统包括一个带功率因数校正的AC-DC前端、一个隔离式大功率DC-DC级以及多个低压双向DC-DC输出通道。这些级联结构共同实现了高效的电网接口、电隔离、精确的电池级控制以及放电过程中的能量回收。

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battery formation