新品一览

FAD3224 Evaluation board

Open Loop evaluation board to support NCP81074AMNTBG

evaluation board to support NCP81075

NCP81295GEVB Hot Swap Smart Fuse Evaluation Board

1-Bit Dual-Supply Unidirectional Voltage Level Translator

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8-Bit Dual-Supply Unidirectional Voltage Level Translator

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2-Bit 24 Mbps Configurable Dual-Supply Autosense Level Translator

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 75 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 132 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 75 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 101 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 132 mOhm

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Self-Protected Very Low IQ High Side Switch With Analog Current Sense

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Self-Protected High Side eFuse With IDLE Mode, I2t Protection, Capacitive Charging Mode & Analog Current Sense

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I/O Port Expander, I2C, 16-bit, Low Power w/Interrupt

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Single SPDT Analog Switch Single Supply

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MOSFET Power, Single, N-Channel, STD Gate,, TCPAK1012, 80 V, 0.64 mΩ, 767 A

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MOSFET - PowerTrench® T6, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6 60 V, 1.1 mΩ, 302 A

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±2 V, Fully Differential Optical Coupled Isolation Amplifier

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±2 V, Fully Differential Optical Coupled Isolation Amplifier

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EliteSiC, 6 mΩ , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package

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EliteSiC, 6 mΩ , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package

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EliteSiC, 8 mΩ , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package

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Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package

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Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

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