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Evaluation board to support NCP3286. 40A Stackable Fixed Frequency Buck Regulator. DGSCOMEVB USB dongle for PMBUS functionality sold separately

T30HM1TS2500EVB Evaluation Board

Single SPDT Analog Switch Single Supply

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High Voltage Switching Diode, 250 V

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I/O Port Expander, I2C, 16-bit, Low Power w/Interrupt

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I/O Port Expander, I2C, 16-bit w/Interrupt

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±2 V, Fully Differential Optical Coupled Isolation Amplifier

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EliteSiC, 12 mohm, 650 V, M3S, TO247-4L, Thin Leads

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EliteSiC, 16 mohm, 650 V, M3S, TO247-4L, Thin Leads

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L Narrow lead

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Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L, thin lead

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Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L narrow lead

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Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L, Thin Lead

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Narrow lead

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Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L Narrow lead

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 27 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 39 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 27 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 39 mOhm

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MOSFET - Power, Single N-Channel, Logic Level, DUAL COOL , DFN8 5x6 40 V, 0.7 mΩ, 349 A

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MOSFET - PowerTrench® T6, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6, 60 V, 1.1 mΩ, 302 A

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MOSFET - PowerTrench® T10, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6, 80 V, 1.9 mΩ, 201 A

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MOSFET - PowerTrench® T10, Single, N-Channel, DUAL COOL,TDFNW8, 80 V, 0.90 mΩ, 396 A

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Single N-Channel Power MOSFET 80V, 253 A, 1.43 mΩ

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Single N-Channel Power MOSFET 80V, 201 A, 1.9 mΩ

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Single N-Channel Power MOSFET 80V, 405A, 0.86mohm

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Single N-Channel Power MOSFET 80V, 352A, 1mΩ

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Ezairo® 8510 is an open−programmable DSP−based hybrid specifically designed for use in high−performance hearing aids and hearables, with state of the art AI support.

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 42 mOhm

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 42 mOhm

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SiC Hybrid PIM, A-type NPC 1200 V, 270 A IGBT, 3.5mohm SiC MOSFET

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ESD and Surge Protection Diode - 2.0 V Vrwm,  13 A and 30 kV Capable, for modern GPIO and Power Lines in encapsulated 0.445 x 0.24 mm package.

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ESD and Surge Protection Diode - 3.6 V Vrwm,  4.5 pF, 15 kV Capable Device for USB D+/-,  GPIO and Audio Lines in encapsulated 0.445 x 0.24 mm package.

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IVN Bus Protector, Single Line LIN & Dual Line CAN

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