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Up to 800 mA DC-DC Converter Evaluation Board

400 mA DC-DC Converter Evaluation Board

T30HM1TS2500EVB Evaluation Board

2-Bit 24 Mbps Configurable Dual-Supply Autosense Level Translator

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Quad FET Bus Switches, Treo Platform, Independent line switches. 1.65-3.6V Operating Voltage

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Quad FET Bus Switches, Treo Platform, Independent line switches. 1.65-3.6V Operating Voltage

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Bus Switch, Mux/Demux, Quad 2:1 / Dual 4:1,1.65-3.6V Operating Voltage

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Bias Resistor Transistors (BRT), Dual NPN/NPN

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MOSFET - Power, Single N-Channel, STD Gate, TOLL 80 V, 0.55 mohm, 588 A

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MOSFET Power, Single, N-Channel, STD Gate,, TCPAK1012, 80 V, 0.79 mΩ, 643 A

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MOSFET - Power, Single N-Channel, Logic Level, DUAL COOL , DFN8 5x6 40 V, 0.49 mΩ, 464 A

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MOSFET - PowerTrench® T10, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6, 80 V, 2.1 mΩ, 186 A

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MOSFET - PowerTrench® T10, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6, 80 V, 2.6 mΩ, 154 A

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MOSFET - PowerTrench® T10, Single, N‐Channel, STD Gate, DUAL COOL, DFN8 5x6, 80 V, 3.0 mΩ, 135 A

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Single N-Channel Power MOSFET 80V, 201 A, 1.9 mΩ

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 42 mOhm

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 42 mOhm

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 27 mOhm

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Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 27 mOhm

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Mux/Demux Dual 1:4,1.65-3.6V Operating Voltage

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SiC Hybrid PIM, A-type NPC 1200 V, 270 A IGBT, 4.3mohm SiC MOSFET

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SiC Hybrid PIM, A-type NPC 1200 V, 270 A IGBT, 3.5mohm SiC MOSFET

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I/O Port Expander, I2C, 16-bit, Low Power w/Interrupt

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I/O Port Expander, I2C, 16-bit w/Interrupt

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Ezairo® 8510 is an open−programmable DSP−based hybrid specifically designed for use in high−performance hearing aids and hearables, with state of the art AI support.

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Dual Mode Bluetooth® 5.3 radio for Ultra-Low-Power portable audio applications.

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IGBT PIM, 3-Level DC-DC Converter, 650 V, 300 A IGBT

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IGBT PIM, 3-Level DC-DC Converter, 650 V, 300 A IGBT

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 16 mOhm

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Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 16 mOhm

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