NTMFS4935N: 单 N 沟道,功率 MOSFET,30V,93A,3.2mΩ

Datasheet: MOSFET — Power, Single, N-Channel, SO-8 FL 30 V, 93 A
Rev. 10 (129kB)
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这是一个 30 V N 沟道功率 MOSFET。
特性   优势
     
  • Low rDS(on) to Minimize Conduction Loss
 
  • Improve System Efficiency
  • Low Capacitance
 
  • Minimize Driver Losses
  • Optimized Gate Charge
 
  • Minimize Switching Losses
  • RoHS Compliant
   
应用   终端产品
  • CPU Power Delivery
  • DC−DC Converters
 
  • Notebook, Desktop, Server, Game Consoles, Point of Load and other Computing Products
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
ONS321A5VGEVB Active
Pb-free
5 Vgs MOSFET Evaluation Board
ONS321B12VGEVB Active
Pb-free
12 Vgs MOSFET Evaluation Board
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFS4935NT1G Lifetime
Pb-free
Halide free
NTMFS4935N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 1500 $0.3663
NTMFS4935NT3G Lifetime
Pb-free
Halide free
NTMFS4935N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 5000 $0.3867
STMFS4935NT1G Active
Pb-free
Halide free
NTMFS4935N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 1500 $0.2943
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K
PandS   (2020-09-14 00:00) : <1K
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : >1K
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
STMFS4935NT1G  
 $0.2943 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
93
107
-
4.2
3.2
15.9
49.4
3579
SO-8FL / DFN-5
外形
488AA   
封装
NTMFS4935N: 单 N 沟道,功率 MOSFET,30V,93A,3.2mΩ
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5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
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