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NCP5304: MOSFET / IGBT 驱动器,高压,高压和低压侧,双输入

Datasheet: High Voltage, High and Low Side Half-Bridge Driver
Rev. 7 (109kB)
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NCP5304 是一款高压功率门极驱动器驱动器,提供两种输出,用于半桥配置中的 2 个 N 沟道功率 MOSFET 或 IGBT 的直接驱动。它使用自举技术来确保高压侧电源开关的正确驱动。该驱动器使用 2 个独立输入,带交叉导通保护。
特性
 
  • High Voltage Range: Up to 600V
  • dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs
  • Cross Conduction Protection with 100ns Internal Fixed Dead Time
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards
应用
  • Half Bridge Power Converters
  • Full Bridge Converters
Availability & Samples
Specifications
外形
应用框图
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NCP5304DR2G Active
Pb-free
Halide free
NCP5304 SOIC-8 751-07 1 260 Tape and Reel 2500 $0.7392
NCP5304PG Obsolete
Pb-free
Halide free
NCP5304 PDIP-8 626-05 1 260 Tube 50  
市场订货至交货的时间(周) : Contact Factory
FutureElectronics   (2020-08-19 00:00) : >1K
PandS   (2020-09-14 00:00) : >1K
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP5304DR2G  
 $0.7392 
Pb
H
 Active   
MOSFET / IGBT
2
Half-Bridge
Junction Isolation
600
23
250 / 500
85
35
170
SOIC-8
外形
751-07    626-05   
封装
NCP5304: MOSFET / IGBT 驱动器,高压,高压和低压侧,双输入
NCP5304: MOSFET / IGBT 驱动器,高压,高压和低压侧,双输入
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