NCV51705: Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed
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The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.
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评估/开发工具信息
产品 | 状况 | Compliance | 简短说明 | 行动 | |
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SEC-3PH-11-OBC-EVB | Active |
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Three-phase On Board Charger (OBC) PFC-LLC platform | ||
SECO-GDBB-GEVB | Active |
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Gate drivers plug-and-play ecosystem |
Availability & Samples
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Specifications
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Intaractive Block Diagram
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外形 |
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NCV51705MNTWG | Active |
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NCV51705, Automotive Qualified 6A SiC Driver | QFNW-24 | 484AE | 1 | 260 | Tape and Reel | 3000 | $1.6666
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市场订货至交货的时间(周) | : | 4 to 8 |
ON Semiconductor (2020-09-02 00:00) | : | 803 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCV51705MNTWG
$1.6666
Pb
A
H
P
Active
SiC MOSFET
1
Single
Non-Isolated
QFNW-24
外形
484AE
Application
Diagram - Block
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