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NCV57000: 隔离高电流和高能效 IGBT 门极驱动器,带内部电流隔离。

Datasheet: Isolated High Current IGBT Gate Driver
Rev. 0 (150kB)
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NCV57000 是一款带内部电流隔离的高电流单沟道 IGBT 驱动器,适用于高功率应用中的高系统能效和可靠性。其功能包括互补输入、开路漏极 FAULT 和 Ready 输出、有源米勒箝位、准确 UVLO、DESAT 保护、DESAT 时的软关断,以及用于系统设计简便性的单独高低驱动器输出(OUTH 和 OUTL)。NCV57000 可适应输入侧上 5V 和 3.3V 信号,以及驱动器侧上的宽偏置电压范围,包括负电压功能。NCV57000 提供 > 5 kVrms(UL1577 等级)电流隔离和 > 1200 Viorm(工作电压)功能。NCV57000 采用宽体 SOIC-16 封装,可在输入和输出之间保证 8 mm 漏电距离,满足加强安全绝缘要求。
特性   优势
     
  • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
 
  • Improves system efficiency
  • Short Propagation Delays with Accurate Matching
 
  • Improves PWM signal integrity
  • DESAT with Soft Turn Off
 
  • Protection against overload and short circuits
  • Active Miller Clamp and Negative Gate Voltage
 
  • Prevents spurious gate turn-on
  • High Transient & Electromagnetic Immunity
 
  • Ruggedness in fast slew rate high voltage and high current switching applications
  • 5 kV Galvanic Isolation
 
  • Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection
应用   终端产品
  • Automotive Power Supplies
  • HEV/EV Traction Inverters
  • OBC
  • BSG Inverters
  • PTC Heaters
  • EV Chargers
 
  • Automobiles
  • xEV/EV Automobiles
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
SEC-6D6KW-OBC-TTP-GEVB Active
Pb-free
A 6.6kW OBC evaluation board using Totem pole topology
SEC-PTC400-EVB Active
Pb-free
HVAC PTC IGBT Driver
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NCV57000DWR2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NCV57000 SOIC-16W 751G-03 1 260 Tape and Reel 1000 Contact Sales Office
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCV57000DWR2G  
Pb
A
H
P
 Active   
IGBT
SiC MOSFET
1
Single
Galvanic Isolation
5.5
24
6000 / 6000
10
15
90
SOIC-16W
外形
751G-03   
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